In Situ Observation of Initial Stage in Dielectric Growth and Deposition of Ultrahigh Nucleation Density Dielectric on Two-Dimensional Surfaces-Reference-Cited by-同舟云学术

In Situ Observation of Initial Stage in Dielectric Growth and Deposition of Ultrahigh Nucleation Density Dielectric on Two-Dimensional Surfaces

Published:2015-09-28 Issue:10 Volume:15 Page:6626-6633
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Park Jun Hong,Movva Hema C. P.¹,Chagarov Evgeniy,Sardashti Kasra,Chou Harry¹,Kwak Iljo,Hu Kai-Ting,Fullerton-Shirey Susan K.²,Choudhury Pabitra³,Banerjee Sanjay K.¹,Kummel Andrew C.

Affiliation:

1. Electrical and Computer Engineering, University of Texas at Austin, Austin, Texas 78712, United States

2. Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556, United States

3. Department of Chemical Engineering, New Mexico Tech, Socorro, New Mexico 87801, United States

Funder

Defense Advanced Research Projects Agency

Microelectronics Advanced Research Corporation

Semiconductor Research Corporation

Division of Materials Research

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.5b02429

Reference47 articles.

1. Electric Field Effect in Atomically Thin Carbon Films

2. The rise of graphene

3. Current saturation in zero-bandgap, top-gated graphene field-effect transistors

4. Quantum Hall Effect in a Gate-Controlled p-n Junction of Graphene

5. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

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