Structure and electrical properties of epitaxial SrRuO3 thin films controlled by oxygen partial pressure-Reference-Cited by-同舟云学术

Structure and electrical properties of epitaxial SrRuO3 thin films controlled by oxygen partial pressure

Published:2016-12-21 Issue:23 Volume:120 Page:235108
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Sun Yan¹,Zhong Ni¹,Zhang Yuan-Yuan¹,Qi Rui-Juan¹,Huang Rong¹,Tang Xiao-Dong¹,Yang Ping-Xiong¹,Xiang Ping-Hua¹,Duan Chun-Gang¹

Affiliation:

1. Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4972477

Reference33 articles.

1. Weyl fermions and spin dynamics of metallic ferromagnet SrRuO3

2. Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films

3. Structure, physical properties, and applications ofSrRuO3thin films

4. Strain-mediated electric-field control of exchange bias in a Co90Fe10/BiFeO3/SrRuO3/PMN-PT heterostructure

5. Strain dependence of antiferromagnetic interface coupling inLa0.7Sr0.3MnO3/SrRuO3superlattices

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