Highly mobile ferroelastic domain walls in compositionally graded ferroelectric thin films
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://www.nature.com/articles/nmat4567.pdf
Reference48 articles.
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3. Kwak, B. S. et al. Strain relaxation by domain formation in epitaxial ferroelectric thin films. Phys. Rev. Lett. 68, 3733–3736 (1992).
4. Setter, N. et al. Ferroelectric thin films: review of materials, properties, and applications. J. Appl. Phys. 100, 051606 (2006).
5. Li, D. & Bonnell, D. A. Controlled patterning of ferroelectric domains: fundamental concepts and applications. Annu. Rev. Mater. Res. 38, 351–368 (2008).
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