Magnetic-field-induced localization of electrons in InGaN/GaN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1613999
Reference13 articles.
1. Luminescence spectra from InGaN multiquantum wells heavily doped with Si
2. Localization of carriers and polarization effects in quaternary AlInGaN multiple quantum wells
3. Optical detection of magnetic fields using giant magnetoresistance in undoped coupled quantum wells
4. Strong red shift of indirect exciton luminescence in low magnetic field
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1. Enhanced efficiency of near-UV LEDs by surface plasmon and magnetic field effects from metal films;J CERAM PROCESS RES;2022
2. Improved efficiency of InGaN/GaN light-emitting diodes with perpendicular magnetic field gradients;Optics Express;2019-12-03
3. Magnetically enhanced luminescence of CdSe/ZnS quantum dot light-emitting diodes using circular ferromagnetic Co/Pt multilayer disks;Optics Express;2019-12-02
4. Modification of GaN thin film on sapphire substrate optical properties under weak magnetic fields;Materials Research Express;2018-12-14
5. Enhancement of the Optical Output Power of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes by a CoFe Ferromagnetic Layer;ACS Photonics;2015-11-02
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