Improved efficiency of InGaN/GaN light-emitting diodes with perpendicular magnetic field gradients-Reference-Cited by-同舟云学术

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Improved efficiency of InGaN/GaN light-emitting diodes with perpendicular magnetic field gradients

Published:2019-12-03 Issue:25 Volume:27 Page:36708
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Han Jang-Hwan,Kim Jae-Joon,Leem Young-Chul,Kim Sang-Jo,Kwak Wonyoung,Jeong Woo-Lim,Cho BeongKi,Lee Dong-Seon,Park Seong-Ju

Funder

National Research Foundation of Korea

Gwangju Institute of Science and Technology Research Institute

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference31 articles.

1. White light-emitting diodes: History, progress, and future

2. A revolution in lighting

3. Progress in high-luminance LED technology for solid-state lighting

4. Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer

5. Effect of Mg doping in the barrier of InGaN/GaN multiple quantum well on optical power of light-emitting diodes

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