Improved electron mobility in InSb epilayers and quantum wells on off-axis Ge (001) substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3702820
Reference28 articles.
1. Reduction of microtwin defects for high-electron-mobility InSb quantum wells
2. Electronic transport in modulation-doped InSb quantum well heterostructures
3. Very high hole mobilities in modulation-doped Ge quantum wells grown by low-energy plasma enhanced chemical vapor deposition
4. Heteroepitaxial growth of InSb on Si(001) surface via Ge buffer layers
5. Growth of InSb epilayers and quantum wells on Ge(001) substrates by molecular beam epitaxy
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2. Mechanical properties of ultrathin gold nanowires from first principles: Interdependencies between size, morphology, and twin boundaries;Physical Review Materials;2020-08-25
3. Electrical properties of Si and Be doped InSb and InAlSb/InSb superlattice applied to improve the doping efficiency;Journal of Crystal Growth;2020-04
4. Mechanical properties of gold nanowires prepared by nanoskiving approach;Nanoscale;2020
5. Growth and characterization of InSb on (1 0 0) Si for mid-infrared application;Applied Surface Science;2018-05
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