Quantitative evaluation of grain boundary activity in multicrystalline semiconductors by light beam induced current: An advanced model
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3462447
Reference17 articles.
1. Grain boundary recombination: Theory and experiment in silicon
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4. Influence of illumination on the grain boundary recombination velocity in silicon
5. Theory of beam induced current characterization of grain boundaries in polycrystalline solar cells
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1. Grain boundaries in polycrystalline materials for energy applications: First principles modeling and electron microscopy;Applied Physics Reviews;2024-01-30
2. Determination of carrier recombination velocity at inclined grain boundaries in multicrystalline silicon through photoluminescence imaging and carrier simulation;Journal of Applied Physics;2020-09-28
3. A Method to Quantify the Collective Impact of Grain Boundaries on the Internal Quantum Efficiency of Multicrystalline Silicon Solar Cells;physica status solidi (a);2020-08-02
4. Assessment of Bulk and Interface Quality for Liquid Phase Crystallized Silicon on Glass;IEEE Journal of Photovoltaics;2019-03
5. Imaging Surface Recombination Velocities of Grain Boundaries in Multicrystalline Silicon Wafers via Photoluminescence;Solar RRL;2016-12-07
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