Improved modeling of grain boundary recombination in bulk andp‐njunction regions of polycrystalline silicon solar cells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363806
Reference31 articles.
1. Grain boundaries in semiconductors
2. Electronic processes at grain boundaries in polycrystalline semiconductors under optical illumination
3. Theory of grain-boundary and intragrain recombination currents in polysilicon p-n-junction solar cells
4. Recombination velocity at grain boundaries in polycrystalline Si under optical illumination
5. Grain boundary recombination: Theory and experiment in silicon
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