Recombination velocity at grain boundaries in polycrystalline Si under optical illumination-Reference-Cited by-同舟云学术

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Recombination velocity at grain boundaries in polycrystalline Si under optical illumination

Published:1980-12 Issue:12 Volume:1 Page:263-266
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Panayotatos P.,Card H.C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31821/01481175.pdf?arnumber=1481175

Cited by 49 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of grain boundary orientation on the recombination in polycrystalline materials: a theoretical and simulation study;Applied Physics A;2022-09-16

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3. AC Performance of Polysilicon Leaky-Mode MSM Photodetectors;Journal of Lightwave Technology;2010-09

4. Recombination properties of grain boundaries in polycrystalline silicon under illumination;Semiconductor Science and Technology;2000-08-15

5. Analysis of solar cells using the IBIC technique;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1999-09

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