Study of SiO2‐Si and metal‐oxide‐semiconductor structures using positrons
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353879
Reference40 articles.
1. Interaction of positron beams with surfaces, thin films, and interfaces
2. SiO2/Si interface probed with a variable‐energy positron beam
3. Microvoids at theSiO2/Si interface
4. SiO2/Si interface properties using positrons
5. Study of hydrogen interaction with SiO2/Si(100) system using positrons
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