SiO2/Si interface properties using positrons
Author:
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.44.5885/fulltext
Reference10 articles.
1. An investigation of the influence of low-temperature annealing treatments on the interface state density at the Si-SiO2
2. Interface state behaviour of plasma grown oxides following low temperature annealing
3. Elimination and Generation of Si ‐ SiO2 Interface Traps by Low Temperature Hydrogen Annealing
4. Chemistry of Si‐SiO2interface trap annealing
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