Formation and decay of metastable fluorine atoms in pulsed fluorocarbon/oxygen discharges monitored by laser‐induced fluorescence
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.102692
Reference19 articles.
1. A model of the chemical processes occurring in CF4/O2 discharges used in plasma etching
2. A Study of the Optical Emission from an rf Plasma during Semiconductor Etching
3. Plasma etching of Si and SiO2—The effect of oxygen additions to CF4 plasmas
4. The design of plasma etchants
5. Spectroscopic diagnostics of CF4‐O2 plasmas during Si and SiO2 etching processes
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1. Global model of plasma chemistry in a low-pressure O2/F2discharge;Journal of Physics D: Applied Physics;2002-02-01
2. Laser-induced fluorescence from collisionally excited Si atoms in laser ablation plume;Journal of Applied Physics;1999-10
3. Measurement of Diffusion Coefficient of $\bf CF_{2}$ Radical in DC Pulsed $\bf CF_{4}/H_{2}$ Discharge Plasma;Japanese Journal of Applied Physics;1995-10-15
4. Time resolved study of a reactive low pressure plasma: Determination of basic data on electron‐fluorine collisions;Journal of Applied Physics;1995-10
5. Angular momentum state mixing and quenching of n=3 atomic hydrogen fluorescence;Chemical Physics;1995-06
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