Reduction in dislocation densities in the step‐graded growth of InGaAs by molecular‐beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.92565
Reference4 articles.
1. Substrate effect on the lattice constants of the MBE‐grown In1−xGaxAs and GaSb1−yAsy
2. Effect of lattice mismatch on the electron mobilities of InAs grown on GaAs by MBE
3. Studies by cross‐sectional transmission electron microscope of InAs grown by molecular beam epitaxy on GaAs substrates
4. Molecular‐beam epitaxy (MBE) of In1−xGaxAs and GaSb1−yAsy
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3. Annealing effects on lattice-strain–relaxed In0.5Al0.5As/In0.5Ga0.5As heterostructures grown on GaAs substrates;Journal of Crystal Growth;1999-05
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