Molecular beam epitaxy growth of indium-rich structures towards high channel conductivity for a high electron mobility transistor using a linearly graded buffer layer-Reference-Cited by-同舟云学术

Molecular beam epitaxy growth of indium-rich structures towards high channel conductivity for a high electron mobility transistor using a linearly graded buffer layer

Published:1996-12 Issue:3 Volume:169 Page:435-442
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hong Sang-Ki,Lee Hae-Gwon,Lee Jae-Jin,Kim Sang-Gi,Pyun Kwang-Eui,Park Hyung-Moo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. 650-AA self-aligned-gate pseudomorphic Al/sub 0.48/In/sub 0.52/As/Ga/sub 0.2/In/sub 0.8/As high electron mobility transistors

2. Comparison of device performance of highly strained Ga1−xInxAs/a10.48In0.52As (0.53 ≤ × ≤ 0.90) MODFETs

3. The growth of highly mismatched InxGa1−xAs (0.28≤x≤1) on GaAs by molecular‐beam epitaxy

4. Int. Conf. on Indium Phosphide and Related Materials;Dickmann,1994

5. Int. Conf. on Indium Phosphide and Related Materials;Brown,1994

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3. Structural and electrical properties of metamorphic nanoheterostructures with a high InAs content (37–100%) grown on GaAs and InP substrates;Crystallography Reports;2011-09

4. Transport properties of modulation-doped InAs-inserted-channel In0.75Al0.25As/In0.75Ga0.25As structures grown on GaAs substrates;Applied Physics Letters;2000-11-13

5. Molecular beam epitaxy growth of In[sub y2]Al[sub 1−y2]As/In[sub 0.73]Ga[sub 0.27]As/In[sub y1]Al[sub 1−y1]As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1997-11