Molecular beam epitaxy growth of In[sub y2]Al[sub 1−y2]As/In[sub 0.73]Ga[sub 0.27]As/In[sub y1]Al[sub 1−y1]As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer-Reference-Cited by-同舟云学术

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Molecular beam epitaxy growth of In[sub y2]Al[sub 1−y2]As/In[sub 0.73]Ga[sub 0.27]As/In[sub y1]Al[sub 1−y1]As/ InP P-HEMTs with enhancement conductivity using an intentional nonlattice-matched buffer layer

Published:1997-11 Issue:6 Volume:15 Page:2021
ISSN:0734-211X
Container-title:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
language:
Short-container-title:J. Vac. Sci. Technol. B

Author:

Jiang C.

Publisher

American Vacuum Society

Subject

General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of In[sub x]Ga[sub 1−x]As/In[sub y]Al[sub 1−y]As high electron mobility transistor structures grown by solid-source molecular beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2001

2. Transport properties of modulation-doped InAs-inserted-channel In0.75Al0.25As/In0.75Ga0.25As structures grown on GaAs substrates;Applied Physics Letters;2000-11-13

3. Pseudomorphic In x Ga 1-x As/In y Al 1-y As high-electron mobility transistor structures grown by solid source molecular beam epitaxy;Advanced Microelectronic Processing Techniques;2000-10-24

4. Strain engineered pHEMTs on virtual substrates: a Monte Carlo simulation study;Solid-State Electronics;1999-07

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