Degradation analysis of AlGaN/GaN high electron mobility transistor by electroluminescence, electric field-induced optical second-harmonic generation, and photoluminescence imaging
Author:
Affiliation:
1. Toyota Central R&D Laboratories, Inc., Nagakute, Aichi 480-1192, Japan
2. Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, Meguro, Tokyo 152-8552, Japan
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5019998
Reference27 articles.
1. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
2. Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives
3. Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors
4. Influence of threading dislocation density on early degradation in AlGaN/GaN high electron mobility transistors
5. Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors
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