Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors-Reference-Cited by-同舟云学术

Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors

Published:2014-06-02 Issue:22 Volume:104 Page:223506
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bajo M. Montes¹,Sun H.¹,Uren M. J.¹,Kuball M.¹

Affiliation:

1. Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol, Tyndall Avenue, Bristol BS8 1TL, United Kingdom

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4881637

Reference17 articles.

1. History of GaN: High-Power RF Gallium Nitride (GaN) from Infancy to Manufacturable Process and Beyond

2. AlGaN/GaN HFET reliability

3. AlGaN/GaN-Based HEMTs Failure Physics and Reliability: Mechanisms Affecting Gate Edge and Schottky Junction

4. On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress

5. Electroluminescence and Transmission Electron Microscopy Characterization of Reverse-Biased AlGaN/GaN Devices

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