Three dimensional localization of unintentional oxygen impurities in gallium nitride-Reference-Cited by-同舟云学术

Three dimensional localization of unintentional oxygen impurities in gallium nitride

Published:2019 Issue:77 Volume:55 Page:11539-11542
ISSN:1359-7345
Container-title:Chemical Communications
language:en
Short-container-title:Chem. Commun.

Author:

Michałowski Paweł Piotr¹²³^ORCID,Złotnik Sebastian¹²³^ORCID,Rudziński Mariusz¹²³

Affiliation:

1. Łukasiewicz Research Network-Institute of Electronic Materials Technology

2. 01-919 Warsaw

3. Poland

Abstract

3D SIMS analysis shows that a vast majority of unintentional oxygen impurities are agglomerated along the cores of screw and mixed dislocations.

Funder

Narodowe Centrum Nauki

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CC/C9CC04707G

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