Radio-frequency small-signal model of hetero-gate-dielectric p-n-p-n tunneling field-effect transistor including charge conservation capacitance and substrate parameters-Reference-Cited by-同舟云学术

Radio-frequency small-signal model of hetero-gate-dielectric p-n-p-n tunneling field-effect transistor including charge conservation capacitance and substrate parameters

Published:2015-09-07 Issue:9 Volume:118 Page:095708
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Marjani Saeid,Hosseini Seyed Ebrahim

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4929361

Reference53 articles.

1. Fabrication and Characterization of Axially Doped Silicon Nanowire Tunnel Field-Effect Transistors

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction

4. Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs

5. Tunnel FET technology: A reliability perspective

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