Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction-Reference-Cited by-同舟云学术

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Tunneling field-effect transistor with Ge/In0.53Ga0.47As heterostructure as tunneling junction

Published:2013-03-07 Issue:9 Volume:113 Page:094502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Guo Pengfei,Yang Yue,Cheng Yuanbing,Han Genquan,Pan Jisheng,Ivana ,Zhang Zheng,Hu Hailong,Xiang Shen Ze,Kean Chia Ching,Yeo Yee-Chia

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4794010

Reference61 articles.

1. Band-to-Band Tunneling in Carbon Nanotube Field-Effect Transistors

2. Vertical Tunnel Field-Effect Transistor

3. Low-subthreshold-swing tunnel transistors

4. Tunneling Field-Effect Transistors (TFETs) With Subthreshold Swing (SS) Less Than 60 mV/dec

5. Double-Gate Tunnel FET With High-$\kappa$ Gate Dielectric

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1. Dual source negative capacitance GaSb/InGaAsSb/InAs heterostructure based vertical TFET with steep subthreshold swing and high on-off current ratio;Results in Physics;2021-10

2. Full-Band Quantum Transport of Heterojunction Electron Devices With Empirical Pseudopotentials;IEEE Transactions on Electron Devices;2020-12

3. Non-Quasi-Static Effect on Ge-Body pTFET for Different Source Materials;2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2020-04

4. Heterostructure Ge-Body pTFETs for Analog/RF Applications;IEEE Journal of the Electron Devices Society;2020

5. Performance enhancement of the dual-metal gate In0.53Ga0.47As dopingless TFET by using a platinum metal strip insertion;Japanese Journal of Applied Physics;2019-09-06

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