Work function contrast and energy band modulation between amorphous and crystalline Ge2Sb2Te5 films
Author:
Affiliation:
1. Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
2. School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China
Funder
National High-tech R&D Program of China
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4929369
Reference28 articles.
1. Phase-change materials for rewriteable data storage
2. Phase Change Memory
3. Interfacial phase-change memory
4. Band alignment between amorphous Ge2Sb2Te5 and prevalent complementary-metal-oxide-semiconductor materials
5. Dependence of energy band offsets at Ge2Sb2Te5/SiO2 interface on nitrogen concentration
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