Dependence of energy band offsets at Ge2Sb2Te5/SiO2 interface on nitrogen concentration
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3079396
Reference21 articles.
1. Amorphous-to-crystal transition of nitrogen- and oxygen-doped Ge2Sb2Te5 films studied by in situ resistance measurements
2. Crystal Structure and Microstructure of Nitrogen-Doped Ge2Sb2Te5Thin Film
3. Nitrogen-doped Ge2Sb2Te5 films for nonvolatile memory
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2. Band alignment of atomic layer deposited high-k Al2O3/multilayer MoS2 interface determined by X-ray photoelectron spectroscopy;Journal of Alloys and Compounds;2015-11
3. Work function contrast and energy band modulation between amorphous and crystalline Ge2Sb2Te5 films;Applied Physics Letters;2015-08-24
4. Band alignment between GeTe and SiO2/metals for characterization of junctions in nonvolatile resistance change elements;Applied Physics Letters;2011-06-06
5. Fermi-level pinning and charge neutrality level in nitrogen-doped Ge2Sb2Te5: Characterization and application in phase change memory devices;Journal of Applied Physics;2010-09
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