Raman spectroscopy and spreading resistance analysis of phosphorus implanted and annealed silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356543
Reference24 articles.
1. Ion implantation in semiconductors—Part I: Range distribution theory and experiments
2. Ion implantation in semiconductors—Part II: Damage production and annealing
3. Annealing kinetics of defects of ion-implanted and furnace-annealed silicon layers: thermodynamic approach
4. Raman scattering from boron‐implanted laser‐annealed silicon
5. Comments on ’’Raman scattering from boron‐implanted laser annealed silicon’’
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