The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon-Reference-Cited by-同舟云学术

The Effect of Lattice Damage and Annealing Conditions on the Hyperfine Structure of Ion Implanted Bismuth Donors in Silicon

Published:2018-06-28 Issue:2 Volume:1 Page:1800038
ISSN:2511-9044
Container-title:Advanced Quantum Technologies
language:en
Short-container-title:Adv. Quantum Technol.

Author:

Peach Tom¹^ORCID,Homewood Kevin²³⁴,Lourenco Manon²³⁴,Hughes Mark⁵,Saeedi Kaymar⁶^ORCID,Stavrias Nik⁶,Li Juerong¹,Chick Steven¹^ORCID,Murdin Ben¹,Clowes Steven¹^ORCID

Affiliation:

1. Department of Physics; University of Surrey; Guildford Surrey GU2 7XH UK

2. Department of Electrical and Electronic Engineering; University of Surrey; Guildford Surrey GU2 7XH UK

3. School of Material Science and Engineering; Hubei University; Wuhan 430062 P. R. China

4. Materials Research Institute and School of Physics and Astronomy; Queen Mary University of London; Mile End Road London E1 4NS UK

5. Joule Physics Laboratory; School of Computing, Science & Engineering; University of Salford; Salford M5 4WT UK

6. Radboud University; Institute for Molecules and Materials; FELIX Laboratory; Toernooiveld 7c 6525 ED Nijmegen The Netherlands

Funder

Engineering and Physical Sciences Research Council

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computational Theory and Mathematics,Condensed Matter Physics,Mathematical Physics,Nuclear and High Energy Physics,Electronic, Optical and Magnetic Materials,Statistical and Nonlinear Physics

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/qute.201800038/fullpdf

Reference33 articles.

1. A single-atom transistor

2. Highly tunable exchange in donor qubits in silicon

3. Electron Spin Resonance Experiments on Donors in Silicon. I. Electronic Structure of Donors by the Electron Nuclear Double Resonance Technique

4. The initialization and manipulation of quantum information stored in silicon by bismuth dopants

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