Abstract
Abstract
The Poisson distribution of event-to-
i
th
-nearest-event radial distances is well known for homogeneous processes that do not depend on location or time. Here we investigate the case of a non-homogeneous point process where the event probability (and hence the neighbour configuration) depends on location within the event space. The particular non-homogeneous scenario of interest to us is ion implantation into a semiconductor for the purposes of studying interactions between the implanted impurities. We calculate the probability of a simple cluster based on nearest neighbour distances, and specialise to a particular two-species cluster of interest for qubit gates. We show that if the two species are implanted at different depths there is a maximum in the cluster probability and an optimum density profile.
Funder
Engineering and Physical Sciences Research Council
Subject
General Physics and Astronomy
Cited by
1 articles.
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