Sidewall damage in a silicon substrate caused by trench etching
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.104729
Reference9 articles.
1. A corrugated capacitor cell (CCC)
2. Dry etching damage of silicon: A review
3. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
4. DLTS Study of RIE-Induced Deep Levels in Si Using p+n Diode Arrays
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