Electronic properties of Se‐treated SiO2/GaAs interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106850
Reference9 articles.
1. Effects of passivating ionic films on the photoluminescence properties of GaAs
2. Enhanced electronic properties of GaAs surfaces chemically passivated by selenium reactions
3. Schottky barrier formation on (NH4)2S‐treatedn‐ andp‐type (100)GaAs
4. The Effect of (NH4)2S Treatment on the Interface Characteristics of GaAs MIS Structures
5. Recombination at GaAs surfaces and GaAs/AlGaAs interfaces probed byinsituphotoluminescence
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1. Electrical properties of sulfur-passivated III–V compound devices;Vacuum;2002-09
2. Chalcogenide passivation of III–V semiconductor surfaces;Semiconductors;1998-11
3. The Effect of Sulfur Passivation and Rapid Thermal Annealing on the Properties of InAs MOS Structures with the Oxide Layer Deposited by Reactive Sputtering;physica status solidi (a);1997-06
4. Evidence for the formation of ordered layers on SeS2treated GaAs(110) using atomic force microscopy;Journal of Applied Physics;1996-12
5. Electron spectroscopic analysis of the SiO2/Si system and correlation with metal–oxide–semiconductor device characteristics;Journal of Applied Physics;1996-05-01
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