Formation of InAs wetting layers studied by cross-sectional scanning tunneling microscopy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2042543
Reference21 articles.
1. Atomistic simulation of strain relaxation inInxGa1−xAs/GaAsquantum dots with nonuniform composition
2. Investigation of In segregation in InAs/AlAs quantum-well structures
3. Quantification of segregation and mass transport inInxGa1−xAs/GaAsStranski-Krastanow layers
4. Limited In incorporation during pseudomorphic InAs/GaAs growth and quantum dot formation observed by in situ stress measurements
5. Relaxation of a strained quantum well at a cleaved surface
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