Generalized hydrogen release-reaction model for the breakdown of modern gate dielectrics-Reference-Cited by-同舟云学术

Generalized hydrogen release-reaction model for the breakdown of modern gate dielectrics

Published:2013-07-07 Issue:1 Volume:114 Page:014103
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wu Ernest Y.,Suñé Jordi

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4811460

Reference47 articles.

1. Power-law voltage acceleration: A key element for ultra-thin gate oxide reliability

2. Time dependent dielectric breakdown of amorphous ZrAlxOy high-k dielectric used in dynamic random access memory metal-insulator-metal capacitor

3. J.Y. Seo, J.E. Seok, H.J. Kim, H.J. Kim, H.S. Park, J.E. Jeon, and W.S. Lee, in Proceedings of the 26th International Conference on Microelectronics (MIEL, 2008), p. 521.

4. Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films

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