Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123677
Reference8 articles.
1. Ultimate limit for defect generation in ultra-thin silicon dioxide
2. Explanation for the polarity dependence of breakdown in ultrathin silicon dioxide films
3. Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
4. Mechanism for stress‐induced leakage currents in thin silicon dioxide films
5. Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
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