Electrical characterization of native-oxide InAlP/GaAs metal-oxide-semiconductor heterostructures using impedance spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1669078
Reference9 articles.
1. Self-aligned GaAs p-channel enhancement mode MOS heterostructure field-effect transistor
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3. GaAs MOSFET with oxide gate dielectric grown by atomic layer deposition
4. High electron mobility InGaAs-GaAs field effect transistor with thermally oxidised AlAs gate insulator
5. AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs
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1. Impedance analysis of Al2O3/H-terminated diamond metal-oxide-semiconductor structures;Applied Physics Letters;2015-02-23
2. Band alignment study of lattice-matched InAlP and Ge using x-ray photoelectron spectroscopy;Applied Physics Letters;2013-07-15
3. Variable-angle spectroscopic ellipsometry of InAlP native oxide dielectric layers for GaAs metal–oxide–semiconductor field effect transistor applications;Journal of Applied Physics;2013-03-14
4. Oxidation of Al-bearing III-V materials: A review of key progress;Journal of Applied Physics;2013-02-07
5. Impedance Analysis of Controlled-Polarization-Type Ferroelectric-Gate Thin Film Transistor Using Resistor–Capacitor Lumped Constant Circuit;Japanese Journal of Applied Physics;2011-04-20
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