Variable-angle spectroscopic ellipsometry of InAlP native oxide dielectric layers for GaAs metal–oxide–semiconductor field effect transistor applications-Reference-Cited by-同舟云学术

Variable-angle spectroscopic ellipsometry of InAlP native oxide dielectric layers for GaAs metal–oxide–semiconductor field effect transistor applications

Published:2013-03-14 Issue:10 Volume:113 Page:103515
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yuan Wangqing,Hall D. C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4794817

Reference23 articles.

1. Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices

2. AlxGa1−xAs–GaAs metal–oxide semiconductor field effect transistors formed by lateral water vapor oxidation of AlAs

3. Electrical properties of InAlP native oxides for metal–oxide–semiconductor device applications

4. Electrical characterization of native-oxide InAlP/GaAs metal-oxide-semiconductor heterostructures using impedance spectroscopy

5. GaAs MOSFET Using InAlP Native Oxide as Gate Dielectric

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