Pressure dependence ofinsituboron‐doped silicon films prepared by low‐pressure chemical vapor deposition. II. Resistivity
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343795
Reference11 articles.
1. Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture
2. Boron Doping Effect on Silicon Film Deposition in the Si2 H 6 ‐ B 2 H 6 ‐ He Gas System
3. Low Pressure Chemical Vapor Deposition of In Situ Boron‐Doped Polysilicon
4. Pressure dependence ofinsituboron‐doped silicon films prepared by low‐pressure chemical vapor deposition. I. Microstructure
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1. Low Resistivity p[sup +] Polycrystalline Silicon Deposition at Low Temperatures with SiH[sub 4]/BCl[sub 3];Electrochemical and Solid-State Letters;2004
2. Deep discrete trenches filled by in-situ doped polysilicon: an alternative method for junction insulating box;SPIE Proceedings;1999-09-01
3. The mechanism of secondary grain growth in polysilicon films;Journal of Crystal Growth;1997-01
4. n‐type polycrystalline silicon films obtained by crystallization ofinsituphosphorus‐doped amorphous silicon films deposited at low pressure;Journal of Applied Physics;1994-11
5. Interface analysis in polysilicon thin films and poly-Si/SiO2 systems;Surface and Interface Analysis;1992-10
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