Pressure dependence ofinsituboron‐doped silicon films prepared by low‐pressure chemical vapor deposition. I. Microstructure
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343794
Reference8 articles.
1. Influence of AsH[sub 3], PH[sub 3],and B[sub 2]H[sub 6] on the Growth Rate and Resistivity of Polycrystalline Silicon Films Deposited from a SiH[sub 4]-H[sub 2] Mixture
2. Deposition and electrical properties ofinsituphosphorus‐doped silicon films formed by low‐pressure chemical vapor deposition
3. Phosphorus‐Doped Polycrystalline Silicon via LPCVD: II . Surface Interactions of the Silane/Phosphine/Silicon System
4. Pressure dependence ofinsituboron‐doped silicon films prepared by low‐pressure chemical vapor deposition. II. Resistivity
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4. Influence of dopant concentration and type of substrate on the local organization of low-pressure chemical vapour deposition in situ boron doped silicon films from silane and boron trichloride;Thin Solid Films;2004-01
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