AC conductance measurement and analysis of the conduction processes in HfOx based resistive switching memory
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3663968
Reference26 articles.
1. Resistive Random Access Memory (ReRAM) Based on Metal Oxides
2. Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
3. A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure
4. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
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