Effects of hole self-trapping by polarons on transport and negative bias illumination stress in amorphous-IGZO
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4986180
Reference45 articles.
1. Present status of amorphous In–Ga–Zn–O thin-film transistors
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3. Photo-bias instability of metal oxide thin film transistors for advanced active matrix displays
4. Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects
5. O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors
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