Electroreflectance of surface-intrinsic- n+-type doped GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366148
Reference12 articles.
1. Franz–Keldysh oscillations in modulation spectroscopy
2. Electroreflectance and photoreflectance study of the space-charge region in semiconductors: (In-Sn-O)/InP as a model system
3. Photoreflectance study of surface photovoltage effects at (100)GaAs surfaces/interfaces
4. Franz–Keldysh oscillations originating from a well‐controlled electric field in the GaAs depletion region
5. Photoreflectance study of surface Fermi level in GaAs and GaAlAs
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Effects of polarization on electroreflectance spectroscopy of surface-intrinsic n[sup +]-type doped GaAs;Journal of Applied Physics;2002
2. Fermi-level pinning of GaAs at room temperature directly determined by the amplitude of photoreflectance spectra;Optoelectronic Materials and Devices II;2000-07-11
3. Piezoelectric field determination in strained InGaAs quantum wells grown on [111]B GaAs substrates by differential photocurrent;Microelectronics Journal;1999-04
4. Determination of built-in field by applying fast Fourier transform to the photoreflectance of surface-intrinsic n+-type doped GaAs;Applied Physics Letters;1999-01-18
5. Temperature dependence of Fermi level obtained by electroreflectance spectroscopy of undoped n+-type doped GaAs;Applied Physics Letters;1997-12-29
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