Effects of polarization on electroreflectance spectroscopy of surface-intrinsic n[sup +]-type doped GaAs-Reference-Cited by-同舟云学术

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Effects of polarization on electroreflectance spectroscopy of surface-intrinsic n[sup +]-type doped GaAs

Published:2002 Issue:1 Volume:91 Page:78
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Sung Y. G.,Chiou S. J.,Wang D. P.,Lu Y. T.,Huang K. F.,Huang T. C.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Reference17 articles.

1. Einfluß eines elektrischen Feldes auf eine optische Absorptionskante

2. Electroabsorption in Aly Ga1−y As–Alx Ga1−x As double heterostructures

3. Electroabsorption in InGaAsP-InP double heterostructures

4. Polarization-insensitive high-contrast GaAs/AlGaAs waveguide modulator based on the Franz-Keldysh effect

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Band structure and strain distribution of InAs quantum dots encapsulated in (Al)GaAs asymmetric matrixes;Journal of Vacuum Science & Technology A;2023-07-01

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