Piezoelectric field determination in strained InGaAs quantum wells grown on [111]B GaAs substrates by differential photocurrent
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference13 articles.
1. Strain-generated electric fields in [111] growth axis strained-layer superlattices
2. Direct demonstration of a misfit strain‐generated electric field in a [111] growth axis zinc‐blende heterostructure
3. Observation of room‐temperature blue shift and bistability in a strained InGaAs‐GaAs 〈111〉 self‐electro‐optic effect device
4. Direct measurement of piezoelectric field in a [111]B grown InGaAs/GaAs heterostructure by Franz–Keldysh oscillations
5. Piezoelectric field measurements by photoreflectance in strained InGaAs/GaAs structures grown on polar substrates
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Direct determination of the piezoelectric field using the quantum-confined Stark effect in a strained [111]-oriented zinc-blende MQW-SOA;AIP Advances;2022-10-01
2. Electromechanical phenomena in semiconductor nanostructures;Journal of Applied Physics;2011-02
3. Crystal orientation effects on the piezoelectric field of strained zinc-blende quantum-well structures;Physical Review B;2008-11-21
4. Effects of rapid thermal annealing on InGaAsN quantum well based devices grown on misoriented (111)B GaAs;SPIE Proceedings;2005-07-07
5. Observation of the pyroelectric effect in strained piezoelectric InGaAs/GaAs quantum-wells grown on (111) GaAs substrates;Microelectronics Journal;2002-07
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