Photoemission study of nitrogen‐implanted GaAs surfaces
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343180
Reference22 articles.
1. Silicon‐nitride–gallium‐arsenide MIS structures produced by plasma enhanced deposition
2. Silicon‐nitride–gallium‐arsenide MIS structures produced by plasma enhanced deposition
3. Passivation of GaAs surfaces*
4. Photoemission studies of molecular beam epitaxially grown GaAs (001) surfaces exposed to a nitrogen plasma
5. Photoemission studies of molecular beam epitaxially grown GaAs (001) surfaces exposed to a nitrogen plasma
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Study of electrical properties of Al/Si3N4/n-GaAs MIS capacitors deposited at low and high frequency PECVD;The European Physical Journal Applied Physics;2022
2. Buried selectively etchable microstructures in GaAs using deep nitrogen implantation;Radiation Effects and Defects in Solids;1993-03
3. Deep implantation of nitrogen into GaAs for selective three‐dimensional microstructuring;Journal of Applied Physics;1992-10
4. An XPS study of GaN thin films on GaAs;Surface and Interface Analysis;1990-07
5. Qualité diélectrique de couches minces isolantes de GaN obtenues par pulvérisation cathodique réactive;Revue de Physique Appliquée;1990
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