Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements-Reference-Cited by-同舟云学术

Determination of polarization fields in group III-nitride heterostructures by capacitance-voltage-measurements

Published:2016-03-07 Issue:9 Volume:119 Page:095713
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Rychetsky Monir¹,Koslow Ingrid¹²,Avinc Baran¹,Rass Jens¹²,Wernicke Tim¹,Bellmann Konrad¹,Sulmoni Luca¹^ORCID,Hoffmann Veit²,Weyers Markus²,Wild Johannes³,Zweck Josef³^ORCID,Witzigmann Bernd⁴,Kneissl Michael¹²

Affiliation:

1. Institute of Solid State Physics, Technische Universität Berlin, Berlin, Germany

2. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Berlin, Germany

3. Fakultät für Physik, University of Regensburg, Regensburg, Germany

4. Computational Electronics and Photonics Group and CINSaT, University of Kassel, Kassel, Germany

Funder

Deutsche Forschungsgemeinschaft (DFG)

Alexander von Humboldt-Stiftung (Humboldt Foundation)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4943185

Reference31 articles.

1. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

2. Piezoelectric effects on electrical and optical properties of wurtzite GaN/AlGaN quantum well lasers

3. First-principles calculation of the piezoelectric tensor d⇊ of III–V nitrides

4. Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

5. Origin of efficiency droop in GaN-based light-emitting diodes

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multiwavelength Emission from InGaN/GaN MQW Truncated Pyramids Grown on a GaN Dodecagonal Pyramid Template;Crystal Growth & Design;2023-04-20

2. Space charge profile study of AlGaN-based p-type distributed polarization doped claddings without impurity doping for UV-C laser diodes;Applied Physics Letters;2020-10-12

3. Calibration of Polarization Fields and Electro-Optical Response of Group-III Nitride Based c-Plane Quantum-Well Heterostructures by Application of Electro-Modulation Techniques;Applied Sciences;2019-12-27

4. Effect of quantum barrier composition on electro-optical properties of AlGaN-based UVC light emitting diodes;Semiconductor Science and Technology;2019-07-17

5. The polarization field in Al-rich AlGaN multiple quantum wells;Japanese Journal of Applied Physics;2019-05-09