Comparative study of minority electron properties inp+‐GaAs doped with beryllium and carbon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107756
Reference10 articles.
1. Use of CCl4 and CHCl3 in gas source molecular beam epitaxy for carbon doping of GaAs and GaxIn1−xP
2. Measurement considerations for zero-field time-of-flight studies of minority carrier diffusion in III–V semiconductors
3. Zero-Field Time-of-Flight Measurements of Electron Diffusion in P+-GaAs
4. Velocity electric field relationship for minority electrons in highly dopedp‐GaAs
5. The effect of electron-hole scattering on minority carrier transport in bipolar transistors
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1. Improvement of photoemission performance of a gradient-doping transmission-mode GaAs photocathode;Chinese Physics B;2011-11
2. Minority carrier transport properties of GaInNAs heterojunction bipolar transistors with 2% nitrogen;Journal of Applied Physics;2004-01
3. Temperature dependent minority electron mobilities in strained Si/sub 1-x/Ge/sub x/ (0.2≤x≤0.4) layers;IEEE Transactions on Electron Devices;2000-04
4. Technique for measurement of the minority carrier mobility with a bipolar junction transistor;Applied Physics Letters;1997-01-27
5. Temperature dependence of minority and majority carrier mobilities in degenerately doped GaAs;Applied Physics Letters;1995-08-21
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