Technique for measurement of the minority carrier mobility with a bipolar junction transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118185
Reference13 articles.
1. Measurement considerations for zero-field time-of-flight studies of minority carrier diffusion in III–V semiconductors
2. Electron mobility in p‐type GaAs
3. Comparative study of minority electron properties inp+‐GaAs doped with beryllium and carbon
4. Experimental observation of a minority electron mobility enhancement in degenerately dopedp‐type GaAs
5. Minority hole mobility inn+GaAs
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4. Temperature dependent minority electron mobilities in strained Si/sub 1-x/Ge/sub x/ (0.2≤x≤0.4) layers;IEEE Transactions on Electron Devices;2000-04
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