Minority carrier transport properties of GaInNAs heterojunction bipolar transistors with 2% nitrogen
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1631075
Reference23 articles.
1. GaAs/In0.08Ga0.92As Double Heterojunction Bipolar Transistors with a Lattice-Mismatched Base
2. GaInNAs: a novel material for long-wavelength semiconductor lasers
3. GaAs/Ga0.89In0.11N0.02As0.98/GaAs NpN double heterojunction bipolar transistor with low turn-on voltage
4. Turn-on voltage investigation of GaAs-based bipolar transistors with Ga/sub 1-x/In/sub x/As/sub 1-y/Ny base layers
5. DC characteristics of MOVPE-grown Npn InGaP/InGaAsN DHBTs
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