Tunable electron affinity with electronic band alignment of solution processed dielectric
Author:
Affiliation:
1. Department of Physics, Indian Institute of Science, Bangalore 560 012, India
Funder
Centre for Nano Science and Engineering (CeNSE)
Ministry of Electronics and Information technology (Meity)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4995982
Reference29 articles.
1. Tunable band alignment and dielectric constant of solution route fabricated Al/HfO2/Si gate stack for CMOS applications
2. Advancing MIM Electronics: Amorphous Metal Electrodes
3. Highly Stable and Imperceptible Electronics Utilizing Photoactivated Heterogeneous Sol-Gel Metal-Oxide Dielectrics and Semiconductors
4. In-Depth Studies on Rapid Photochemical Activation of Various Sol-Gel Metal Oxide Films for Flexible Transparent Electronics
5. Critical investigation of high performance spin-coated high-κ titania thin films based MOS capacitor
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