Solution-processed Forming-free ALPO - RRAM based Artificial Synaptic Device with 3 orders of Conductance - Modulation
Author:
Affiliation:
1. IIT Bombay,Department of Electrical Engineering,Mumbai,India,400076
Funder
Industrial Research and Consultancy Centre
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10511270/10511310/10512273.pdf?arnumber=10512273
Reference8 articles.
1. Low power and high speed bipolar switching with a thin reactive Ti buffer layer in robust HfO2 based RRAM
2. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
3. Analog high resistance bilayer RRAM device for hardware acceleration of neuromorphic computation
4. Linearity improvement of HfOx-based memristor with multilayer structure
5. Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity
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