Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells-Reference-Cited by-同舟云学术

Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells

Published:2015-01-07 Issue:1 Volume:117 Page:015302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Yu J. L.¹²³,Cheng S. Y.¹,Lai Y. F.¹,Zheng Q.¹,Chen Y. H.²,Tang C. G.²

Affiliation:

1. Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China

2. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China

3. Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences, Fuzhou 350002, People's Republic of China

Funder

973 program

Foundation of Fuzhou University

National Natural Science Foundation of China (NSFC)

Natural Science Foundation of Fujian Province (Fujian Provincial Natural Science Foundation)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4905020

Reference26 articles.

1. In-plane optical anisotropy induced by asymmetrically δ-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy

2. Quantum-well anisotropic forbidden transitions induced by a common-atom interface potential

3. Well-width dependence of in-plane optical anisotropy in (001) GaAs/AlGaAs quantum wells induced by in-plane uniaxial strain and interface asymmetry

4. Strong in-plane optical anisotropy of asymmetric (001) quantum wells

5. Analytical Envelope-Function Theory of Interface Band Mixing

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Doped or Quantum-Dot Layers as In Situ Etch-Stop Indicators for III/V Semiconductor Reactive Ion Etching (RIE) Using Reflectance Anisotropy Spectroscopy (RAS);Micromachines;2021-04-29

2. Optical anisotropies of asymmetric double GaAs (001) quantum wells;Physical Review B;2021-01-25

3. Spectroscopic evidence of different segregation lengths of indium atoms at the direct and inverted interfaces in GaAs/AlGaAs quantum wells;Physica E: Low-dimensional Systems and Nanostructures;2016-07