Ohmic contacts to n+-GaN capped AlGaN∕AlN∕GaN high electron mobility transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2754371
Reference21 articles.
1. Fabrication and performance of GaN electronic devices
2. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
3. Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy
4. Effect of polarization fields on transport properties in AlGaN/GaN heterostructures
5. AlGaN/AlN/GaN high-power microwave HEMT
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1. Investigation on the Effect of Annealing Temperature on the Side Ohmic Contact Characteristics for Double Channel GaN/AlGaN Epitaxial Layer;Micromachines;2022-05-19
2. Physics‐Based Simulation for Studying the Impact of Contact Resistance on DC and RF Characteristics of AlGaN/AlN/GaN HEMT;Radio Science;2019-10
3. Physics based simulation for studying the impact of contact resistance on DC & RF characteristics of AlGaN/AlN/GaN HEMT;2019 URSI Asia-Pacific Radio Science Conference (AP-RASC);2019-03
4. Formation mechanism of gold-based and gold-free ohmic contacts to AlGaN/GaN heterostructure field effect transistors;Journal of Applied Physics;2017-02-14
5. Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures;Advances in Electrical and Electronic Engineering;2016-03-23
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