Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications-Reference-Cited by-同舟云学术

Multiple optical centers in Eu-implanted AlN nanowires for solid-state lighting applications

Published:2018-11-12 Issue:20 Volume:113 Page:201905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Cardoso J.¹,Ben Sedrine N.¹^ORCID,Alves A.¹,Martins M. A.²,Belloeil M.³,Daudin B.³^ORCID,Faye D. Nd.⁴,Alves E.⁴^ORCID,Lorenz K.⁴⁵,Neves A. J.¹^ORCID,Correia M. R.¹,Monteiro T.¹^ORCID

Affiliation:

1. Departamento de Física e I3N, Universidade de Aveiro, Campus Universitário de Santiago, 3810-193 Aveiro, Portugal

2. Departamento de Física e CICECO, Universidade de Aveiro, 3810-193 Aveiro, Portugal

3. University Grenoble Alpes, CEA/CNRS Group, “Nanophysique et Semiconducteurs,” F-38000 Grenoble, France

4. IPFN, Instituto Superior Técnico, Campus Tecnológico e Nuclear, Estrada Nacional 10, P-2695-066 Bobadela LRS, Portugal

5. Instituto de Engenharia de Sistemas de Computadores-Microsystems and Nanotechnology (INESC-MN), Rua Alves Redol, 1000-029 Lisboa, Portugal

Funder

FEDER funds through COMPETE 2020 and FCT

FEDER funds through POR Lisboa COMPETE 2020 and FCT

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5048772

Reference35 articles.

1. Efficiency Drop in GreenInGaN/GaNLight Emitting Diodes: The Role of Random Alloy Fluctuations

2. Thermal quenching of luminescence and isovalent trap model for rare-earth-ion-doped AlN

3. Rare earth doped III-nitrides for optoelectronics

4. Effect of AlN content on the lattice site location of terbium ions in AlxGa1−xN compounds

5. Room-Temperature Red Emission from a p-Type/Europium-Doped/n-Type Gallium Nitride Light-Emitting Diode under Current Injection

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