Ultraviolet laser‐assisted metalorganic chemical vapor deposition of GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.344467
Reference39 articles.
1. Effect of surface irradiation, substrate temperature, and annealing on laser deposited silicon dioxide
2. Effect of surface irradiation, substrate temperature, and annealing on laser deposited silicon dioxide
3. Effect of surface irradiation, substrate temperature, and annealing on laser deposited silicon dioxide
4. UV Laser-Initiated Formation of Si3N4
5. NH3as a photosensitizer in the epitaxial growth of Ge on GaAs by laser photochemical vapor deposition
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4. Mechanism of ArF Laser induced Photolytic Deposition of W From WF6 on Etched Si and Unetched Si;MRS Proceedings;1995
5. Metalorganic Chemical Vapor Deposition for the Fabrication of Nanostructure Materials;VLSI Electronics Microstructure Science;1994
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